| 摘要 |
Provided is an electronic device which includes a semiconductor memory. The conductor memory comprises: a read route including a unit storage cell; a reference route including a unit reference cell; a read circuit for comparing a read current flowing in the read route and a reference current flowing in the reference route in response to a read voltage and a reference voltage, and detecting data stored in the unit storage cell in accordance with a comparison result; a first replica route which models the read route; and a reference voltage generation portion for generating the reference voltage corresponding to a first replica current flowing in the replica route in response to the read voltage. |
