| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an ion implantation method with excellent productivity, capable of preventing recesses and projections on a surface of a workpiece. <P>SOLUTION: In the ion implantation method, a processing gas containing at least one selected from molecules indicated by XmYn (in the formula, either one of X and Y is a hydrogen atom and then the other thereof is an atom whose mass number is 11 to 40, the number of the hydrogen atoms is 1 to 6, and the number of the other atoms is 1 to 2) is used, the processing gas is introduced under decompression to form plasma, ions ionized in the plasma are drawn, and the drawn ions are accelerated and doped into a workpiece W. At least one of the partial pressure of the processing gas, implantation energy of the ions and implantation dose of the ions is controlled, and the etching speed of active species by the accelerated ions is made slower than the deposition speed of the active species deposited on the surface of the workpiece W. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
