发明名称 |
Method of reading out an image sensor with transfer gate boost |
摘要 |
An image sensor includes photosensitive regions, transfer transistors, and one or more shared charge-to-voltage mechanism. A method for reading out the image sensor includes enabling a first transfer transistor to transfer photo-generated charge from a first photosensitive region to a shared charge-to-voltage mechanism. The method also includes no more than partially enabling a second transfer transistor to partially turn on the second transfer transistor to increase a capacitance of the shared charge-to-voltage mechanism while the photo-generated charge is transferred from the first photosensitive region to the shared charge-to-voltage mechanism. |
申请公布号 |
US9160958(B2) |
申请公布日期 |
2015.10.13 |
申请号 |
US201314133127 |
申请日期 |
2013.12.18 |
申请人 |
OmniVision Technologies, Inc. |
发明人 |
Manabe Sohei;Lyu Jeong-Ho |
分类号 |
H04N5/378;H04N5/3745;H01L27/146 |
主分类号 |
H04N5/378 |
代理机构 |
Blakely Sokoloff Taylor & Zafman LLP |
代理人 |
Blakely Sokoloff Taylor & Zafman LLP |
主权项 |
1. A method for reading out an image sensor having a first photosensitive region, a second photosensitive region, a shared charge-to-voltage mechanism, a first transfer transistor disposed to selectively couple the first photosensitive region to the shared charge-to-voltage mechanism, and a second transfer transistor disposed to selectively coupled the second photosensitive region to the shared charge-to-voltage mechanism, the method comprising:
enabling the first transfer transistor to transfer photo-generated charge from the first photosensitive region to the shared charge-to-voltage mechanism; and no more than partially enabling the second transfer transistor to partially turn on the second transfer transistor to increase a capacitance of the shared charge-to-voltage mechanism while the photo-generated charge is transferred from the first photosensitive region to the shared charge-to-voltage mechanism. |
地址 |
Santa Clara CA US |