发明名称 Method of reading out an image sensor with transfer gate boost
摘要 An image sensor includes photosensitive regions, transfer transistors, and one or more shared charge-to-voltage mechanism. A method for reading out the image sensor includes enabling a first transfer transistor to transfer photo-generated charge from a first photosensitive region to a shared charge-to-voltage mechanism. The method also includes no more than partially enabling a second transfer transistor to partially turn on the second transfer transistor to increase a capacitance of the shared charge-to-voltage mechanism while the photo-generated charge is transferred from the first photosensitive region to the shared charge-to-voltage mechanism.
申请公布号 US9160958(B2) 申请公布日期 2015.10.13
申请号 US201314133127 申请日期 2013.12.18
申请人 OmniVision Technologies, Inc. 发明人 Manabe Sohei;Lyu Jeong-Ho
分类号 H04N5/378;H04N5/3745;H01L27/146 主分类号 H04N5/378
代理机构 Blakely Sokoloff Taylor & Zafman LLP 代理人 Blakely Sokoloff Taylor & Zafman LLP
主权项 1. A method for reading out an image sensor having a first photosensitive region, a second photosensitive region, a shared charge-to-voltage mechanism, a first transfer transistor disposed to selectively couple the first photosensitive region to the shared charge-to-voltage mechanism, and a second transfer transistor disposed to selectively coupled the second photosensitive region to the shared charge-to-voltage mechanism, the method comprising: enabling the first transfer transistor to transfer photo-generated charge from the first photosensitive region to the shared charge-to-voltage mechanism; and no more than partially enabling the second transfer transistor to partially turn on the second transfer transistor to increase a capacitance of the shared charge-to-voltage mechanism while the photo-generated charge is transferred from the first photosensitive region to the shared charge-to-voltage mechanism.
地址 Santa Clara CA US