发明名称 |
Lithography using multilayer spacer for reduced spacer footing |
摘要 |
A method embodiment for patterning a semiconductor device includes forming a plurality of mandrels over a substrate, and forming a multilayer spacer layer over the plurality of mandrels. The multilayer spacer layer is formed by conformably depositing a spacer layer over the plurality of mandrels and treating the spacer layer with plasma. The plurality of mandrels is exposed by etching a top portion of the multilayer spacer layer, thereby forming a multilayer spacer. |
申请公布号 |
US9159579(B2) |
申请公布日期 |
2015.10.13 |
申请号 |
US201314063453 |
申请日期 |
2013.10.25 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Peng Chao-Hsien;Lee Hsiang-Huan;Shue Shau-Lin |
分类号 |
H01L21/3205;H01L21/4763;H01L21/311;H01L21/027;H01L21/033;H01L21/02 |
主分类号 |
H01L21/3205 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A method for patterning a semiconductor device comprising:
forming a plurality of mandrels over a substrate; forming a multilayer spacer layer over the plurality of mandrels, the forming the multilayer spacer layer comprising: conformably depositing a first spacer layer over the plurality of mandrels; wherein the conformably depositing the first spacer layer comprises conformably depositing the first spacer layer to have a first width, and treating the first spacer layer with plasma prior to any etching of the first spacer layer, wherein after the treating the first spacer layer with plasma, a lateral portion of the first spacer layer disposed between first and second mandrels of the plurality of mandrels has a second width thinner than the first width; and forming a multilayer spacer by removing a top portion of the multilayer spacer layer to expose the plurality of mandrels. |
地址 |
Hsin-Chu TW |