| 发明名称 | Nonvolatile memory device and method for fabricating the same | ||
| 摘要 | Provided are a nonvolatile memory device and a method for fabricating the same. The method includes sequentially stacking on a semiconductor substrate a first interlayer dielectric film, a first sacrificial layer, a second interlayer dielectric film, and a second sacrificial layer, forming a resistance variable layer and a first electrode penetrating the first and second interlayer dielectric films and the first and second sacrificial layers, forming an upper trench by removing a top portion of the first electrode, filling the upper trench with a channel layer, exposing a portion of a side surface of the resistance variable layer by removing the second sacrificial layer, forming an insulation layer within the channel layer, and forming a second electrode on the exposed resistance variable layer. | ||
| 申请公布号 | US9159727(B2) | 申请公布日期 | 2015.10.13 |
| 申请号 | US201213537588 | 申请日期 | 2012.06.29 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Park Chan-Jin |
| 分类号 | H01L21/02;H01L27/10;H01L27/24;H01L45/00 | 主分类号 | H01L21/02 |
| 代理机构 | Myers Bigel Sibley & Sajovec, PA | 代理人 | Myers Bigel Sibley & Sajovec, PA |
| 主权项 | 1. A method for fabricating a nonvolatile memory device, the method comprising: sequentially stacking on a semiconductor substrate a first interlayer dielectric film, a first sacrificial layer, a second interlayer dielectric film, and a second sacrificial layer; forming a resistance variable layer and a first electrode penetrating the first and second interlayer dielectric films and the first and second sacrificial layers; forming an upper trench by removing a top portion of the first electrode; filling the upper trench with a channel layer; exposing a portion of a side surface of the resistance variable layer by removing the second sacrificial layer; forming an insulation layer within the channel layer; and forming a second electrode on the exposed resistance variable layer. | ||
| 地址 | KR | ||