NONVOLATILE MEMORY DEVICE AND MERTHOD OF OPERATING THE SAME

摘要

A nonvolatile memory device includes a control circuit that generates an integrated activation signal based on a read command signal for instructing start of an read operation and a ready/busy signal, and simultaneously generates a voltage control signal and a path control signal in response to the integrated activation signal, a voltage providing circuit that generates voltages used to perform the read operation in response to the voltage control signal, and path control circuits that control electrical path connection to a memory cell array in which the read operation is performed in response to the path control signal.

主权项

1. A nonvolatile memory device comprising:
a control circuit configured to generate an integrated activation signal based on a read command signal instructing start of a read operation and a ready/busy signal, and substantially simultaneously generate a voltage control signal and a path control signal in response to the integrated activation signal; a voltage providing circuit configured to generate voltages used to perform the read operation in response to the voltage control signal; and path control circuits configured to control an electrical path connection to a memory cell array in which the read operation is performed, in response to the path control signal.