METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND PROGRAM

摘要

The present invention provides a technology to adjust a work function of a metal film. With alternately supplying a halogen element containing metal raw material, and a nitrogen containing raw material to a processing room, the flux of inactive gas supplied to the processing room with the nitrogen containing raw material when supplying the nitrogen containing raw material to the processing room is greater than the flux of inactive gas supplied to the processing room with the metal raw material when supplying the metal raw material to the processing room. A manufacturing method of a semiconductor comprises the following processes: (a) supplying the halogen containing metal raw material including a metal element and a halogen element by supplying inactive gas to a substrate; and (b) supplying inactive gas including a nitrogen element by supplying the inactive gas with the flux greater than the flux of the inactive gas supplied in the process (a) to the substrate.