Chromium/Titanium/Aluminum-based Semiconductor Device Contact

摘要

A contact to a semiconductor including sequential layers of Cr, Ti, and Al is provided, which can result in a contact with one or more advantages over Ti/Al-based and Cr/Al-based contacts. For example, the contact can: reduce a contact resistance; provide an improved surface morphology; provide a better contact linearity; and/or require a lower annealing temperature, as compared to the prior art Ti/Al-based contacts.

主权项

1. A method comprising:
forming an ohmic contact to a group III nitride layer having an Aluminum content of at least approximately 0.5 in a semiconductor structure, wherein the forming includes: forming a multi-layer structure comprising:
the semiconductor structure;a Chromium layer over the semiconductor structure;a Titanium layer directly on the Chromium layer; andan Aluminum layer directly on the Titanium layer; and annealing the multi-layer structure.