| 主权项 |
1. A method for forming a memory device, comprising:
forming a resistance-switching layer over a first electrode; forming a second electrode over the resistance-switching layer; applying a forming voltage to the resistance-switching layer such that the resistance of the resistance-switching layer is decreased; after the forming voltage is applied, applying an initial reset voltage to the first electrode or the second electrode such that the resistance of the resistance-switching layer is increased; after the initial reset voltage is applied, applying a first set voltage to the first electrode or the second electrode such that the resistance of the resistance-switching layer is decreased; after the first set voltage is applied, applying a second reset voltage to the first electrode or the second electrode such that the resistance of the resistance-switching layer is increased; and after the second reset voltage is applied, applying a second set voltage to the first electrode or the second electrode such that the resistance of the resistance-switching layer is decreased, wherein the second set voltage is lower than the first set voltage. |
