| 摘要 |
It is an object of the present invention to provide a method for manufacturing a silicon carbide semiconductor device capable of preventing an increase in a cost of manufacturing one chip while favorably maintaining forward characteristics of the semiconductor device. The present invention includes the steps of: (a) inspecting the characteristics of the forward conduction of body diodes as element structures; (b) classifying the body diode and the body diode as a first group suitable for the forward conduction or a second group unsuitable for the forward conduction on the basis of an inspection result of the step (a); and (c) manufacturing a silicon carbide semiconductor MOSFET that needs the forward conduction using the body diode of the first group or manufacturing a silicon carbide semiconductor MOSFET that does not need the forward conduction using the body diode of the second group. |
