发明名称 |
Nonvolatile memory device and method of fabricating the same |
摘要 |
Provided is a method of fabricating a nonvolatile memory device. The method of fabricating a nonvolatile memory device, the method comprising: sequentially stacking a first interlayer insulating film, a first sacrificial film, a second interlayer insulating film, and a second sacrificial film on a semiconductor substrate; forming a first penetrating portion, which exposes a region of a top surface of the semiconductor substrate, by etching the first and second interlayer insulating films and the first and second sacrificial films; forming an epitaxial layer on the exposed region of the top surface of the semiconductor substrate in the first penetrating portion by epitaxial growth; forming a first electrode, which contacts a resistance change film and the epitaxial layer, in the first penetrating portion; exposing regions of side surfaces of the epitaxial layer by removing the first epitaxial film; forming an insulating film inside the exposed regions of the side surfaces of the epitaxial layer; and forming a second electrode on the exposed regions of the side surfaces of the epitaxial layer. |
申请公布号 |
US9153577(B2) |
申请公布日期 |
2015.10.06 |
申请号 |
US201213537454 |
申请日期 |
2012.06.29 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Park Chan-Jin |
分类号 |
H01L21/8239;H01L27/06;H01L27/10;H01L27/24;H01L45/00 |
主分类号 |
H01L21/8239 |
代理机构 |
Myers Bigel Sibley & Sajovec, PA |
代理人 |
Myers Bigel Sibley & Sajovec, PA |
主权项 |
1. A method of fabricating a nonvolatile memory device, the method comprising:
sequentially stacking a first interlayer insulating film, a first sacrificial film, a second interlayer insulating film, and a second sacrificial film on a semiconductor substrate; forming a first penetrating portion, which exposes a region of a top surface of the semiconductor substrate, by etching the first and second interlayer insulating films and the first and second sacrificial films; forming an epitaxial layer on the exposed region of the top surface of the semiconductor substrate in the first penetrating portion by epitaxial growth; forming a first electrode, which contacts a resistance change film and the epitaxial layer, in the first penetrating portion; exposing regions of side surfaces of the epitaxial layer by removing the first sacrificial film; forming an insulating film inside the exposed regions of the side surfaces of the epitaxial layer; and forming a second electrode on the exposed regions of the side surfaces of the epitaxial layer. |
地址 |
KR |