发明名称 SUBNANOSECOND SCINTILLATION DETECTOR
摘要 A scintillation detector, including a scintillator that emits scintillation; a semiconductor photodetector having a surface area for receiving the scintillation, wherein the surface area has a passivation layer configured to provide a peak quantum efficiency greater than 40% for a first component of the scintillation, and the semiconductor photodetector has built in gain through avalanche multiplication; a coating on the surface area, wherein the coating acts as a bandpass filter that transmits light within a range of wavelengths corresponding to the first component of the scintillation and suppresses transmission of light with wavelengths outside said range of wavelengths; and wherein the surface area, the passivation layer, and the coating are controlled to increase the temporal resolution of the semiconductor photodetector.
申请公布号 WO2015148861(A1) 申请公布日期 2015.10.01
申请号 WO2015US22853 申请日期 2015.03.26
申请人 CALIFORNIA INSTITUTE OF TECHNOLOGY 发明人 HOENK, MICHAEL;HENNESSY, JOHN;HITLIN, DAVID
分类号 G01T1/20;A61B6/00;G01T1/24 主分类号 G01T1/20
代理机构 代理人
主权项
地址