发明名称 |
SUBNANOSECOND SCINTILLATION DETECTOR |
摘要 |
A scintillation detector, including a scintillator that emits scintillation; a semiconductor photodetector having a surface area for receiving the scintillation, wherein the surface area has a passivation layer configured to provide a peak quantum efficiency greater than 40% for a first component of the scintillation, and the semiconductor photodetector has built in gain through avalanche multiplication; a coating on the surface area, wherein the coating acts as a bandpass filter that transmits light within a range of wavelengths corresponding to the first component of the scintillation and suppresses transmission of light with wavelengths outside said range of wavelengths; and wherein the surface area, the passivation layer, and the coating are controlled to increase the temporal resolution of the semiconductor photodetector. |
申请公布号 |
WO2015148861(A1) |
申请公布日期 |
2015.10.01 |
申请号 |
WO2015US22853 |
申请日期 |
2015.03.26 |
申请人 |
CALIFORNIA INSTITUTE OF TECHNOLOGY |
发明人 |
HOENK, MICHAEL;HENNESSY, JOHN;HITLIN, DAVID |
分类号 |
G01T1/20;A61B6/00;G01T1/24 |
主分类号 |
G01T1/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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