| 发明名称 |
SEMICONDUCTOR MATERIAL |
| 摘要 |
A semiconductor wafer comprising a substrate; a first AlGaN layer on the substrate; a second AlGaN layer on the first AlGaN layer; a GaN layer on the second AlGaN layer; and a plurality of crystalline GaN islands between the first and second AlGaN layers. |
| 申请公布号 |
US2015280058(A1) |
申请公布日期 |
2015.10.01 |
| 申请号 |
US201314432529 |
申请日期 |
2013.10.02 |
| 申请人 |
CAMBRIDGE ENTERPRISE LIMITED ;Intellec Limited |
发明人 |
Kappers Menno;Zhu Dandan |
| 分类号 |
H01L33/06;H01L31/0352;H01L31/18;H01L31/0304;H01L33/00;H01L33/32 |
主分类号 |
H01L33/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor wafer comprising:
a substrate; a first AlGaN layer on the substrate; a second AlGaN layer on the first AlGaN layer; a GaN layer on the second AlGaN layer; and a plurality of crystalline GaN islands between the first and second AlGaN layers. |
| 地址 |
Cambridgeshire GB |
