发明名称 EMBEDDED CIRCUIT PATTERNINGG FEATURE SELECTIVE ELECTROLESS COPPER PLATING
摘要 Embodiments describe the selective electroless plating of dielectric layers. According to an embodiment, a dielectric layer is patterned to form one or more patterned surfaces. A seed layer is then selectively formed along the patterned surfaces of the dielectric layer. An electroless plating process is used to deposit metal only on the patterned surfaces of the dielectric layer. According to an embodiment, the dielectric layer is doped with an activator precursor. Laser assisted local activation is performed on the patterned surfaces of the dielectric layer in order to selectively form a seed layer only on the patterned surfaces of the dielectric layer by reducing the activator precursor to an oxidation state of zero. According to an additional embodiment, a seed layer is selectively formed on the patterned surfaces of the dielectric layer with a colloidal or ionic seeding solution.
申请公布号 US2015279731(A1) 申请公布日期 2015.10.01
申请号 US201414229777 申请日期 2014.03.28
申请人 LI Yonggang Yong;DHAR Aritra;SENEVIRATNE Dilan;WILLIAMS Jon M. 发明人 LI Yonggang Yong;DHAR Aritra;SENEVIRATNE Dilan;WILLIAMS Jon M.
分类号 H01L21/768;H01L23/522 主分类号 H01L21/768
代理机构 代理人
主权项 1. A method for metallizing a dielectric layer, comprising: patterning the dielectric layer to form one or more patterned surfaces on the dielectric layer; selectively forming a seed layer on the one or more patterned surfaces of the dielectric layer; and exposing the dielectric layer to an electroless plating bath comprising metal ions and a reducing agent, wherein the seed layer is a catalyst that allows the reducing agent to reduce the metal ions, thereby selectively depositing the metal ions on surfaces of the dielectric layer where the seed layer is formed.
地址 Chandler AZ US