半导体装置及其制造方法;SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

一种半导体装置，包括：一半导体层；一第一掺杂井区，设置于该半导体层之一部内；一第一掺杂区，位于该第一掺杂井区内；具有不对称剖面轮廓之一第二掺杂井区，设置于该半导体层之另一部内；一第二掺杂区、一第三掺杂区与一第四掺杂区，设置于该第二掺杂井区之内；一第一闸极结构，设置于该半导体层之一部上且部分覆盖该第二掺杂井区；以及一第二闸极结构，埋设于该半导体层之一部内并穿透该第二掺杂井区之一部。; a first doped well region disposed in a portion of the semiconductor layer; a first doped region disposed in the first doped well region; a second doped well region of an asymmetrical cross section disposed in another portion of the semiconductor layer; second, third, and fourth doped regions formed in the second doped well region; a first gate structure disposed over a portion of the semiconductor layer, practically covering the second doped well region; and a second gate structure embedded in a portion of the semiconductor layer, penetrating a portion of the second doped well region.