METHOD AND APPARATUS FOR SEMICONDUCTOR DEVICE WITH REDUCED DEVICE FOOTPRINT

摘要

A semiconductor device is provided. The semiconductor device includes a semiconductor layer, and a trench formed in a top surface of the semiconductor layer. The trench has a bottom surface and a sidewall. The semiconductor device further includes source and drain regions. One of the source and drain regions may be disposed at the bottom surface of the trench, and the other may be disposed at the top surface of the semiconductor layer, or vice versa. Alternatively, both source and drain regions may be disposed at the bottom surface of the trench. The semiconductor device may further include a first insulator disposed in the trench and in between the source and drain regions. The semiconductor device may further include a second insulator disposed between first insulator and the source region. The semiconductor device may further include a conductive member that disposed on the first insulator, or on the first and second insulators.

主权项

1. A semiconductor device comprising:
a semiconductor layer; a trench formed in a top surface of the semiconductor layer, the trench having:
a bottom surface, anda sidewall; a drain region disposed at the bottom surface of the trench; a source region disposed at the top surface of the semiconductor layer and spaced apart from the drain region; a first insulator disposed in the trench, between the drain region and the source region, and in contact with the bottom surface and the sidewall of the trench; and a second insulator disposed between the drain region and the source region, and on the top surface of the semiconductor layer.