VERTICAL NAND DEVICE WITH SHARED WORD LINE STEPS

摘要

A memory device includes a memory cell array having a first side and a second side and a stepped word line contact region located between the first side and the second side of the memory array. A first word line stair pattern is located in the stepped word line contact region adjacent to the first side of the memory array and a second word line stair pattern located in the stepped word line contact region adjacent to the second side of the memory array. A peripheral device region located in the stepped word line contact region between the first and the second word line stair patterns.

主权项

1. A memory device, comprising:
a memory cell array having a first side and a second side; a stepped word line contact region located between the first side and the second side of the memory cell array; a first word line stair pattern located in the stepped word line contact region adjacent to the first side of the memory cell array; a second word line stair pattern located in the stepped word line contact region adjacent to the second side of the memory cell array; and a peripheral device region located in the stepped word line contact region between the first and the second word line stair patterns.