用于ＣＭＯＳ的双轴拉伸应变锗通道;BI-AXIAL TENSILE STRAINED GE CHANNEL FOR CMOS

摘要

一种设备包含：互补金属氧化物半导体(CMOS)反相器，包含有n-通道金属氧化物半导体场效电晶体(MOSFET)；及p-通道MOSFET，其中在该n-通道MOSFET的通道材料与在该p-通道MOSFET中的通道材料受到双轴拉伸应变。一种方法，包含：形成n-通道金属氧化物半导体场效电晶体(MOSFET)；形成p-通道MOSFET；及连接该n-通道MOSFET及该p-通道MOSFET的闸极电极与汲极区，其中在该n-通道MOSFET中之通道材料与在该p-通道MOSFET中之通道材料受到双轴拉伸应变。; and a p-channel MOSFET, wherein a material of a channel in the n-channel MOSFET and a material of a channel in the p-channel MOSFET is subject to a bi-axial tensile strain. A method including forming an n-channel metal oxide semiconductor field effect transistor (MOSFET); forming a p-channel MOSFET; and connecting the gate electrodes and the drain regions of the n-channel MOSFET and the p-channel MOSFET, wherein a material of the channel in the n-channel MOSFET and a material of the channel in the p-channel MOSFET is subject to a bi-axial tensile strain.