ASYMMETRIC WAVEGUIDE CONFIGURATION ON SILICON NITRIDE BASIS

摘要

It relates to a polarization dependent mode converter on a semiconductor basis, having a waveguide made of a waveguide material (2) comprising SiN x or another solid waveguide material having a refractive index between 1.7 to 2.3, embedded in a cladding material (6) comprising SiO 2 or another solid cladding material having a refractive index less than 1.6 and above 1, wherein the waveguide includes in a portion along its lengthwise extension a first section having a vertical asymmetric configuration, the asymmetric configuration includes a thin layer (4) of silicon above the waveguide material (2), the thickness of the thin Si-layer (4) in vertical direction is less than the thickness of the waveguide material in the same vertical direction.