发明名称 MEMS DEVICE AND FORMATION METHOD THEREOF
摘要 The present disclosure provides MEMS devices and their fabrication methods. A first dielectric layer is formed on a substrate including integrated circuits therein. One or more first metal connections and second metal connections are formed in the first dielectric layer and are electrically connected to the integrated circuits. A second dielectric layer is formed on the first dielectric layer. An acceleration sensor is formed in the second dielectric layer to electrically connect to the one or more first metal connections. One or more first metal vias are formed in the second dielectric layer to electrically connect to the second metal connections. A pressure sensor is formed on the second dielectric layer to electrically connect to the first metal vias. The MEMS devices provided by the present disclosure are compact in size through the integration of the acceleration sensor and the pressure sensor.
申请公布号 US2015274507(A1) 申请公布日期 2015.10.01
申请号 US201514645741 申请日期 2015.03.12
申请人 Semiconductor Manufacturing International (Shanghai) Corporation 发明人 XU WEI;LIU GUOAN
分类号 B81B7/00;B81C1/00 主分类号 B81B7/00
代理机构 代理人
主权项 1. A method for forming a MEMS device, comprising: providing a substrate including integrated circuits therein; forming a first dielectric layer on the substrate; forming one or more first metal connections and second metal connections in the first dielectric layer, wherein the first metal connections and the second metal connections are electrically connected to the integrated circuits; forming a second dielectric layer on the first dielectric layer; forming an acceleration sensor in the second dielectric layer, the acceleration sensor being electrically connected to one or more first metal connections; forming one or more first metal vias in the second dielectric layer, the first metal vias being electrically connected to the second metal connections; and forming a pressure sensor on the second dielectric layer, the pressure sensor being electrically connected to the first metal vias.
地址 Shanghai CN
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