COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER USING SAME

摘要

A composite substrate (1) comprises a support substrate (11) with a thermal conductivity at 1050°C of 3Wm-1°C-1 to 20Wm-1°C-1 and a semiconductor film (13) disposed on the principal surface (11m) side of the support substrate (11) and having a thickness of at least 10 µm. The ratio between the mean coefficient of thermal expansion of the support substrate (11) from 25°C to 800°C in a direction parallel to the principal surface (11m) to the mean coefficient of thermal expansion of the semiconductor film (13) from 25°C to 800°C in the direction parallel to the principal surface (13m) is greater than 0.9 and less than 1.1. Due to this configuration, a composite substrate favorable for the efficient manufacture of high-quality semiconductor wafers with low warpage is provided, and so is a method for manufacturing a semiconductor wafer using this composite substrate.