发明名称 |
SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which chipping on a rear surface and warpage of a wafer can be prevented, and to provide a manufacturing method thereof. <P>SOLUTION: The semiconductor device is provided with a semiconductor layer having a first main surface, a second main surface provided on a side opposite to the first main surface and a channel forming region provided on a surface layer of the first main surface side; and a first main electrode provided on an inner side than a dicing street on the first main surface of the semiconductor layer; a second main electrode provided on an inner side than a dicing street in the second main surface of the semiconductor layer; and a control electrode opposite to the channel forming region via an insulating film. <P>COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2008098529(A) |
申请公布日期 |
2008.04.24 |
申请号 |
JP20060280786 |
申请日期 |
2006.10.13 |
申请人 |
TOSHIBA CORP |
发明人 |
KOBAYASHI MOTOOMI;NOZAKI HIDEKI;TSUCHIYA MASANOBU |
分类号 |
H01L21/336;H01L21/28;H01L21/288;H01L21/301;H01L29/739;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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