发明名称 SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which chipping on a rear surface and warpage of a wafer can be prevented, and to provide a manufacturing method thereof. <P>SOLUTION: The semiconductor device is provided with a semiconductor layer having a first main surface, a second main surface provided on a side opposite to the first main surface and a channel forming region provided on a surface layer of the first main surface side; and a first main electrode provided on an inner side than a dicing street on the first main surface of the semiconductor layer; a second main electrode provided on an inner side than a dicing street in the second main surface of the semiconductor layer; and a control electrode opposite to the channel forming region via an insulating film. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008098529(A) 申请公布日期 2008.04.24
申请号 JP20060280786 申请日期 2006.10.13
申请人 TOSHIBA CORP 发明人 KOBAYASHI MOTOOMI;NOZAKI HIDEKI;TSUCHIYA MASANOBU
分类号 H01L21/336;H01L21/28;H01L21/288;H01L21/301;H01L29/739;H01L29/78 主分类号 H01L21/336
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