FABRICATION METHOD OF SI BASED LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE

摘要

A manufacturing method of an Si-based nitride semiconductor light emitting diode and a light emitting diode manufactured thereby are provided to increase the extraction efficiency by using a reflective layer having a high reflectance. A method for manufacturing a nitride semiconductor light emitting diode includes a process for growing a nitride semiconductor light emitting diode(101) on an upper surface of a substrate(102), and a process for depositing a reflective layer on a lower surface of the substrate. The method further includes a process for thinning the substrate after the nitride semiconductor light emitting diode is grown on the upper surface of the substrate. A via hole(201) is formed in the substrate after the nitride semiconductor light emitting diode is grown on the upper surface of the substrate. The via hole is formed by performing an exposure process.