发明名称 PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a photosensitive resin composition capable of producing a heat resistant relief structure, having high sensitivity, ensuring small reduction in film thickness, and excellent in film thickness uniformity in a wafer after development and in film thickness uniformity after curing, and a method for manufacturing a semiconductor device using the composition. <P>SOLUTION: The photosensitive resin composition is characterized by containing a polybenzoxazole precursor, a naphthoquinonediazide photosensitizer, and a specific compound containing phenolic hydroxyl groups. The method for manufacturing a semiconductor device using the composition is also provided. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007240975(A) 申请公布日期 2007.09.20
申请号 JP20060064605 申请日期 2006.03.09
申请人 FUJIFILM CORP 发明人 YAMANAKA TSUKASA;SATO KENICHIRO
分类号 G03F7/037;G03F7/004;H01L21/027 主分类号 G03F7/037
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