摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photosensitive resin composition capable of producing a heat resistant relief structure, having high sensitivity, ensuring small reduction in film thickness, and excellent in film thickness uniformity in a wafer after development and in film thickness uniformity after curing, and a method for manufacturing a semiconductor device using the composition. <P>SOLUTION: The photosensitive resin composition is characterized by containing a polybenzoxazole precursor, a naphthoquinonediazide photosensitizer, and a specific compound containing phenolic hydroxyl groups. The method for manufacturing a semiconductor device using the composition is also provided. <P>COPYRIGHT: (C)2007,JPO&INPIT |