| 摘要 |
A method for manufacturing a semiconductor device is provided to reduce the size of a contact plug and to reduce capacitance between a bit line and a word line by increasing a thickness of a gate spacer in a bit line region. A plurality of active regions(A) of an I-type are defined on a semiconductor substrate(10). A plurality of word lines(WL) are formed on the semiconductor substrate. A first spacer(20a) is formed at each of both sidewalls of the word lines. A mask pattern of a bar type is formed to cover a region between the active regions on the substrate including the first spacer. A second spacer(20b) which is thinner the first spacer is formed by etching a part of a width of the first spacer which is not covered by the mask pattern. A contact plug(C) is formed by burying the conductive layer for plug between the word lines including the first and the second spacers. A bit line is formed on the contact plug which is formed between the word lines including the first spacer.
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