发明名称 |
GATE INSULATING FILM, ORGANIC TRANSISTOR, METHOD FOR MANUFACTURING ORGANIC EL DISPLAY, AND DISPLAY |
摘要 |
<p>Disclosed are a method for manufacturing an organic transistor comprising a gate insulating film of higher quality, a method for manufacturing an organic EL display, and a display. Specifically disclosed is an organic TFT (50) composed of a gate electrode (52), a gate insulating film (54), an organic semiconductor layer (56), a source electrode (58) and a drain electrode (60). The organic TFT (50) is characterized in that the gate insulating film (54) is obtained by thermosetting a mixture containing a melamine derivative and a mixed polymer represented by the chemical formula below wherein a cyanoethyl group and a hydroxyl group coexist.</p> |
申请公布号 |
WO2006104069(A1) |
申请公布日期 |
2006.10.05 |
申请号 |
WO2006JP306074 |
申请日期 |
2006.03.27 |
申请人 |
PIONEER CORPORATION;OHTA, SATORU |
发明人 |
OHTA, SATORU |
分类号 |
H01L29/786;G09F9/30;H01L21/312;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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