发明名称 GATE INSULATING FILM, ORGANIC TRANSISTOR, METHOD FOR MANUFACTURING ORGANIC EL DISPLAY, AND DISPLAY
摘要 <p>Disclosed are a method for manufacturing an organic transistor comprising a gate insulating film of higher quality, a method for manufacturing an organic EL display, and a display. Specifically disclosed is an organic TFT (50) composed of a gate electrode (52), a gate insulating film (54), an organic semiconductor layer (56), a source electrode (58) and a drain electrode (60). The organic TFT (50) is characterized in that the gate insulating film (54) is obtained by thermosetting a mixture containing a melamine derivative and a mixed polymer represented by the chemical formula below wherein a cyanoethyl group and a hydroxyl group coexist.</p>
申请公布号 WO2006104069(A1) 申请公布日期 2006.10.05
申请号 WO2006JP306074 申请日期 2006.03.27
申请人 PIONEER CORPORATION;OHTA, SATORU 发明人 OHTA, SATORU
分类号 H01L29/786;G09F9/30;H01L21/312;H01L21/336 主分类号 H01L29/786
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