| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor device that prevents occurrence of cracks, that has a nitride semiconductor multi-layered film with uniform thicknesses and good growth surface flatness, that can be fabricated at a satisfactory yield, and that is free of a current leak. SOLUTION: The nitride semiconductor element has a processed substrate 100 including a recessed digged region 102 formed on a surface of a nitride semiconductor substrate or formed on a surface of a the nitride semiconductor layer grown on a substrate other than the nitride semiconductor substrate and a nitride semiconductor multi-layered film 101 which includes a nitride semiconductor primary coat 103 formed first as a film on the processed substrate 100 and comprises a multi-layered film of a nitride semiconductor, the nitride semiconductor primary coat 103 being a compound containing GaN in a composition. COPYRIGHT: (C)2006,JPO&NCIPI
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