A stressed metal technology may fabricate high-Q, three-dimensional microelectronic inductors and transformers. The fabrication method may allow the production of inductors and transformers on high-resistivity silicon substrate and with metal deposition of Au and Cr that is fully compatible with semiconductor fabrication technologies. The produced inductors and transformers exhibit Q factors > 60 at frequencies of 3 to 7 GHz. High efficiency, high-Q transformers with coupling factors 0.6<k<0.9 may be created with very high self-resonance frequencies.
申请公布号
WO2006063193(A2)
申请公布日期
2006.06.15
申请号
WO2005US44536
申请日期
2005.12.07
申请人
PURDUE RESEARCH FOUNDATION;WEON, DAEHEE;MOHAMMADI, SAEED;JEON, JONG-HYEOK;KATEHI, LINDA
发明人
WEON, DAEHEE;MOHAMMADI, SAEED;JEON, JONG-HYEOK;KATEHI, LINDA