发明名称 Manufacturing method for semiconductor device, semiconductor device and semiconductor wafer
摘要 A manufacturing method for a semiconductor device formed in a device region composed of a plurality of semiconductor layers on a substrate, the method including a trench forming step of forming a trench on the substrate around the device region and a semiconductor growth step of growing the semiconductor layer in the device region.
申请公布号 US2005039673(A1) 申请公布日期 2005.02.24
申请号 US20040921913 申请日期 2004.08.20
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 ISHIDA MASAHIRO
分类号 C30B25/02;C30B25/18;C30B29/40;H01L21/20;H01L29/06;H01L33/00;(IPC1-7):C30B1/00 主分类号 C30B25/02
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