发明名称 |
Manufacturing method for semiconductor device, semiconductor device and semiconductor wafer |
摘要 |
A manufacturing method for a semiconductor device formed in a device region composed of a plurality of semiconductor layers on a substrate, the method including a trench forming step of forming a trench on the substrate around the device region and a semiconductor growth step of growing the semiconductor layer in the device region.
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申请公布号 |
US2005039673(A1) |
申请公布日期 |
2005.02.24 |
申请号 |
US20040921913 |
申请日期 |
2004.08.20 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ISHIDA MASAHIRO |
分类号 |
C30B25/02;C30B25/18;C30B29/40;H01L21/20;H01L29/06;H01L33/00;(IPC1-7):C30B1/00 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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