| 摘要 |
<p>PURPOSE:To decrease the number of masks and to improve the accuracy of mask alignment and the yield by laminating a semiconductor layer and wiring electrode layer on picture element electrodes and scanning electrodes and patterning these two layers with the same photomask. CONSTITUTION:A transparent conductive film is deposited on a transparent insulating substrate and the picture element electrodes 2a and the scanning electrodes 2b are formed by using the 1st photomask. An amorphous silicon (semiconductor) layer 30 is deposited thereon and further, the wiring electrode layer 40 is laminated thereon, thereafter, these two layers are simultaneously patterned by using the same 2nd photomask to form the semiconductor regions D1, D2 and the wiring electrodes 42. The required parts of the wiring electrodes are thereafter irradiated with a concd. beam to form contact parts C1, C2. As a result, at least one of the photomasks is decreased as compared to the conventional process and the accuracy of the mask alignment and the yield are improved.</p> |
