发明名称 Focused ion beam processing method
摘要 There is provided a focused ion beam processing method in which damage to a workpiece is minimized when the surface of the workpiece is irradiated and processed with an ion beam. The method comprises the steps of: generating an acceleration voltage between an ion source and a workpiece; focusing an ion beam emitted from the ion source; and applying the ion beam to a predetermined process position to process the surface of the workpiece. In this process, the energy level of the ion beam produced by the acceleration voltage is set within a range from at least 1 keV to less than 20 keV.
申请公布号 US7576340(B2) 申请公布日期 2009.08.18
申请号 US20060542434 申请日期 2006.10.03
申请人 SII NANO TECHNOLOGY INC. 发明人 HAGIWARA RYOJI;SUGIYAMA YASUHIKO;KOZAKAI TOMOKAZU
分类号 H01J37/30;H01J37/244 主分类号 H01J37/30
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