摘要 |
Provided is a piezoelectric device wherein temperature characteristics are improved without changing a distance between an IDT electrode and a supporting layer. A piezoelectric device is provided with (a) a piezoelectric substrate, (b) a conductive pattern, which is formed on one main surface (11a) of the piezoelectric substrate and includes an IDT electrode (12), (c) a supporting layer (20), which is formed on the one main surface (11a) of the piezoelectric substrate to surround the circumference of an IDT forming region wherein the IDT electrode (12) is formed, with a thickness larger than that of the IDT electrode (12); and (d) a cover layer, which is arranged on the supporting layer and covers the IDT forming region. On the supporting layer (20), removing sections (24) from which parts of the piezoelectric substrate adhered to the one main surface (11a) are partially removed are formed in a plurality of areas close to at least the IDT forming region. |
申请人 |
MURATA MANUFACTURING CO., LTD.;KUDO, HAYAMI;TAKAMINE, YUICHI;IKADA, KATSUHIRO |
发明人 |
KUDO, HAYAMI;TAKAMINE, YUICHI;IKADA, KATSUHIRO |