发明名称 |
MEMORY CELLS, MEMORY CELL PROGRAMMING METHODS, MEMORY CELL READING METHODS, MEMORY CELL OPERATING METHODS, AND MEMORY DEVICES |
摘要 |
Embodiments disclosed include memory cell operating methods, memory cell programming methods, memory cell reading methods, memory cells, and memory devices. In one embodiment, a memory cell includes a wordline, a first bitline, a second bitline, and a memory element. The memory element is electrically connected to the wordline and selectively electrically connected to the first bitline and the second bitline. The memory element stores information via a resistive state of the memory element. The memory cell is configured to convey the resistive state of the memory element via either a first current flowing from the first bitline through the memory element to the wordline or a second current flowing from the wordline through the memory element to the second bitline. |
申请公布号 |
WO2009091445(A1) |
申请公布日期 |
2009.07.23 |
申请号 |
WO2008US84422 |
申请日期 |
2008.11.21 |
申请人 |
MICRON TECHNOLOGY, INC.;LIU, JUN |
发明人 |
LIU, JUN |
分类号 |
G11C7/10;G11C7/12;G11C7/22;G11C8/08 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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