<p>A new sputter source is disclosed that allows for high rates of deposition at pressures one or two orders of magnitude lower than has previously been obtained. This results in denser films with reduced ion and electron damage to the substrate.</p>
申请公布号
WO2009092097(A1)
申请公布日期
2009.07.23
申请号
WO2009US31550
申请日期
2009.01.21
申请人
4D-S PTY LTD.;BRORS, DANIEL;SCHMIDT, DOMINIK;HAWRAN, MICHAEL;CORREIA, DAVE;SHULENBERGER, ART
发明人
BRORS, DANIEL;SCHMIDT, DOMINIK;HAWRAN, MICHAEL;CORREIA, DAVE;SHULENBERGER, ART