发明名称 Method of forming Sn-Ag-Cu ternary alloy thin-film on base material
摘要 A method of forming an Sn-Ag-Cu ternary alloy thin-film of the present invention forms the ternary alloy thin-film by electroplating. A plating bath contains an Sn compound, an Ag compound, a Cu compound, an inorganic chelating agent and an organic chelating agent. The inorganic chelating agent is one of a polymerized phosphate-based chelating agent and a chelating agent represented by a chemical formula (I): MFX(X-Y)- . . . (I) where M is an arbitrary metal, X is an arbitrary natural number and Y is an oxidation number of M. The organic chelating agent is one of porphyrins, dipivaloylmethane, phthalocyanines and a compound represented by a chemical formula (II): R-(CH2CH2O)n-A . . . (II) where R is an alkyl group having a carbon number of 8 to 30, A is CH2COONa or CH2SO4Na and n is a natural number.
申请公布号 US7563353(B2) 申请公布日期 2009.07.21
申请号 US20050665819 申请日期 2005.10.19
申请人 FCM CO., LTD. 发明人 MIURA SHIGEKI
分类号 C25D3/56;C25D3/60;C25D5/02 主分类号 C25D3/56
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