| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element that has high quality and high reliability by subjecting a group III-V nitride-based single-crystal compound semiconductor layer to crystal growth on a substrate of a material system different therefrom, and that achieves planar light emission. <P>SOLUTION: The group III-V nitride-based semiconductor light emitting element includes a laminate structure composed by laminating a plurality of single-crystal semiconductor growth layers each formed of at least one of group III-V nitride-based compound semiconductor material on a substrate formed of a constituent material other than the group III-V nitride-based material. A bulk lattice constant a<SB>1</SB>of a first growth layer located closest to the substrate within the laminate structure, and a bulk lattice constant a<SB>2</SB>of a second growth layer having the largest thickness within the laminate structure satisfy a relationship of a<SB>2</SB><a<SB>1</SB>≤1.005a<SB>2</SB>when the thermal expansion coefficient of the substrate is larger than the thermal expansion coefficients of the layers, and satisfy a relationship of 0.995a<SB>2</SB>≤a<SB>1</SB><a<SB>2</SB>when the thermal expansion coefficient of the substrate is smaller than the thermal expansion coefficients of the layers. <P>COPYRIGHT: (C)2009,JPO&INPIT |
