LOW MICROPIPE 100 MM SILICON CARBIDE WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method of producing a high quality single crystal wafer of SiC in a larger size and a lower defect level in the crystal formed in a sublimation system using a seed crystal. SOLUTION: The single crystal wafer of SiC has a diameter of at least about 100 mm, a micropipe density of less than about 25 cm-2, and a polytype selected from a group consisting of 3C, 4H, 6H, 2H and 15R polytypes. The micropipe density represents a count of the total micropipes on the surface divided by the surface area of the wafer. COPYRIGHT: (C)2009,JPO&INPIT