| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for shortening such a time as the resistance between main electrodes becomes the on resistance under steady state when transition is made from off state to on state in a semiconductor device having an impurity diffusion region of a conductivity type different from that of a drift layer within a range surrounding the footprint of a trench in the drift layer. SOLUTION: The semiconductor device has a trench, a gate insulating film, a trench gate electrode, a carrier supply region, a body contact region, a body layer, a drift layer, a region surrounding the footprint of the trench, and a region facing the end face of the trench. The body layer is second conductivity type and surrounds the carrier supply region and the body contact region. In a range where the body layer touches the side face of the trench, the body layer is formed in a range narrower than the deepest portion of the trench gate electrode contained in the trench, and the deepest portion of the body layer in a range touching the region facing the end face of the trench is deeper than the deepest portion of the body layer in the range touching the side face of the trench. COPYRIGHT: (C)2009,JPO&INPIT |
