| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device sufficiently improved in power conversion efficiency. SOLUTION: This semiconductor laser device has an n-type clad layer 3, an n-type clad layer-side guide layer 4, an activating layer 5, a p-type clad layer-side guide layer 6 and a p-type clad layer 7, and in the semiconductor laser device, electrons and holes are injected in a direction perpendicular to the activating layer 5 through the n-type clad layer-side guide layer 4 and the p-type clad layer-side guide layer 6, and the film thickness of the p-type clad layer-side guide layer 6 is set to be smaller than that of the n-type clad layer-side guide layer 4 to bring the activating layer 5 close to the p-type clad layer 7, and the refractive index value of the p-type clad layer-side guide layer 6 is set to be larger than that of the n-type clad layer-side guide layer 4. COPYRIGHT: (C)2009,JPO&INPIT
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