METHOD OF PROCESSING WAFER

摘要

A method for processing a wafer is provided to prevent degradation of an internal pressure of an oxide film of a wafer due to a polluted dopant by forming an extrinsic gettering film on a top of a bottom surface or an inner part of the bottom of a wafer. A silicone wafer(100) includes an amorphous layer(102) for improving an electrical property in an internal pressure of an oxide film. Thickness of the silicone wafer is to be 50um by performing a back-grinding process about a bottom of the silicone wafer. An intrinsic gettering effect of the silicone wafer is disappeared in the back-grinding process of the silicone wafer. An oxygen ion is injected in a bottom of the silicone wafer into a plasma method in order to increase a proximity gettering effect of the amorphous layer. An extrinsic gettering film(104) is formed on a bottom of the silicone wafer by performing a thermal processing process about the bottom of the silicone wafer.