| 摘要 |
A semiconductor substrate for producing a semiconductor component comprises a base (31), produced of a first semiconductor material and having a first lattice characteristic, and a membrane (32) that is integral with the base and that is movably received relative to the base (31). The membrane (32) forms a surface on which a layer (38), produced of a second semiconductor material and having a second lattice characteristic, is arranged. The second lattice characteristic is different from the first lattice characteristic. In an embodiment of the invention, the membrane (32) has a central membrane zone (34) which is supported by the base (10) from below. The invention further relates to a method for producing a semiconductor component using a semiconductor of this type. |
