OPERATING METHOD OF NONVOLATILE MEMORY DEVICE

摘要

PURPOSE: An operating method of a nonvolatile memory device is provided to manage a bad block more efficiently by processing an ECC(Error Correction Circuit) according to the number of error bits. CONSTITUTION: A memory cell array(102) comprises 1024 memory blocks. A controller(112) generates a program command signal according to a signal which is received from an IO buffer(118). A high voltage generator(110) generates a bias voltage in response to the program command, an erase command, and a read command. An address generator(120) generates a column address signal. An X-decoder(104) supplies the bias voltage to one of the memory blocks.