| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory having high operating speed. <P>SOLUTION: A semiconductor memory comprises: a stack in which a plurality of insulating films and a plurality of electrode films are alternately stacked and in which through holes extending in the stacked direction of the insulating films and the electrode films are formed; blocking layers provided on the inner surfaces of the through holes; carrier storage layers surrounded by the blocking layers; tunnel layers surrounded by the carrier storage layers; and semiconductor pillars surrounded by the tunnel layers. The dielectric constant in portions at the semiconductor pillars sides in the tunnel layers is higher than that in portions at the carrier storage layers sides in the tunnel layers. <P>COPYRIGHT: (C)2012,JPO&INPIT |
