发明名称 |
Semiconductor device having no cracks in one or more layers underlying a metal line layer |
摘要 |
A semiconductor device and a method of manufacturing the same which yields high reliability and a high manufacturing yield. The semiconductor device includes a metal line layer having a plurality of metal line patterns spaced apart from each other, and at least one underlying layer under the metal line layer, wherein the space between two adjacent metal line patterns has a sufficient width to prevent a crack from occurring in one or more of the underlying layers. The cracking of an underlying layer may also be prevented by providing a slit in a direction parallel to the space between two adjacent metal line patterns at a sufficient distance from the space between the two adjacent metal line patterns.
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申请公布号 |
US7847403(B2) |
申请公布日期 |
2010.12.07 |
申请号 |
US20070806562 |
申请日期 |
2007.06.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YI SANG HYUN;KIM YOUNG NAM |
分类号 |
H01L21/3205;H01L23/48;H01L23/528 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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