| 发明名称 |
SEMICONDUCTOR PHOTOELECTRODE, METHOD FOR MANUFACTURING SUCH SEMICONDUCTOR PHOTOELECTRODE AND LIGHT ENERGY CONVERTING DEVICE |
| 摘要 |
<p>The semiconductor photoelectrode of the present invention includes a metallic substrate having irregularities in a surface and a semiconductor layer which is formed on the surface of the metallic substrate and composed of a photocatalytic material. This can increase the light absorption efficiency and, furthermore, prevent recombination of charges.</p> |
| 申请公布号 |
EP1873277(A4) |
申请公布日期 |
2010.11.10 |
| 申请号 |
EP20060730413 |
申请日期 |
2006.03.29 |
| 申请人 |
NISSAN MOTOR COMPANY LIMITED |
发明人 |
OI, TAKASHI;IWASAKI, YASUKAZU;SAYAMA, KAZUHIRO |
| 分类号 |
C25B11/06;B01J23/30;B01J35/02;C25B1/04;H01L31/04;H01M14/00 |
主分类号 |
C25B11/06 |
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