发明名称 |
High purity silicon carbide structures |
摘要 |
Processes for the purification of silicon carbide structures, including silicon carbide coated silicon carbide structures, are disclosed. The processes described can reduce the amount of iron contamination in a silicon carbide structure by 100 to 1000 times. After purification, the silicon carbide structures are suitable for use in high temperature silicon wafer processing.
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申请公布号 |
US7888685(B2) |
申请公布日期 |
2011.02.15 |
申请号 |
US20040900938 |
申请日期 |
2004.07.27 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
SHIVE LARRY WAYNE;GILMORE BRIAN LAWRENCE |
分类号 |
H01L29/15;C04B41/53;C04B41/91 |
主分类号 |
H01L29/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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