| 摘要 |
A NAND memory device is constructed using Silicon On Insulator (SOI) techniques. In particular, Thin Film Transistor (TFT) techniques can be used to fabricate the NAND Flash memory device. In both SOI and TFT structures, the body, or well, is isolated. This can be used to enable a bit-by-bit programming and erasing of individual cells and allows tight control of the threshold voltage, which can enable MLC operation.
|
