发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide each client with a substrate resulting from cooperatively manufacturing different LSIs from a plurality of clients while obtaining security.SOLUTION: A mask pattern 307 is formed which includes an opening 307a wherein any other region than an LSI chip area 331 subjected to provision to a specific client is open. Next, the mask pattern 307 is used as a mask to remove by etching the LSI chip area 332 exposed in the opening 307a, and a blind area 301a is formed. In forming the blind area 301a, a first wiring layer 302, a second wiring layer 303 and a third wiring layer 304 are removed to a part of the lower layer thereof.
申请公布号 JP2011216812(A) 申请公布日期 2011.10.27
申请号 JP20100085893 申请日期 2010.04.02
申请人 NTT ADVANCED TECHNOLOGY CORP 发明人 KUDO KAZUHISA;YANO MASAKI;KONISHI TOSHIFUMI;KAMEI TOSHIKAZU;MATSUSHIMA TAKAAKI;MACHIDA KATSUYUKI
分类号 H01L23/52;H01L21/02;H01L21/3205 主分类号 H01L23/52
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