| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can inhibit air leakage. <P>SOLUTION: A semiconductor device manufacturing method comprises: preparing a semiconductor wafer 14a on which a sensing part 19 is formed in each chip formation region and preparing a cap wafer 20a composing a cap part 20 by being divided into chip units; forming a laminated wafer 50 having a plurality of airtight chamber 30 by bonding the semiconductor wafer 14a and the cap wafer 20a under vacuum; subsequently, dicing the laminated wafer 50 along boundaries of the chip formation regions until at least a boundary surface of a sensor part 10 and the cap part 20 is exposed; and subsequently, forming a thermally-oxidized film 41 in a clearance 40 formed between one surface of the sensor part 10 and one surface of the cap part 20 by heating. <P>COPYRIGHT: (C)2013,JPO&INPIT |
