Polyaniline/gallium doped ZnO heterostructure device via plasma enhanced polymerization technique: Preparation, characterization and electrical properties

摘要

PURPOSE: A PANI(P-Polyaniline)/Ga(Gallium)-ZnO(Zinc Oxide) hetero junction structure device with improved electrical properties by gallium and ion doping is provided to provided a high barrier height, a low ideality factor, and an improved saturation current by doping gallium ion on the PANI/ZnO hetero junction structure device. CONSTITUTION: Gallium ion is doped on a PANI/n-ZnO hetero junction structure device. The PANI /n-ZnO hetero junction structure device is manufactured with plasma. The gallium ion doping uses gallium-zinc oxide nano particles. A saturation current of the PANI/n-ZnO hetero junction structure device increases about 12.8 times that before the gallium ion doping.